TP65H050G4YS
TP65H050G4YS
Part number
TP65H050G4YS
Product Categories
Single FETs, MOSFETs
Manufacturer
Transphorm
Describe
650 V 35 A GAN FET HIGH VOLTAGE
Encapsulation
-
Package
Tube
ROHS status
Yes
Price
USD $9.9100
Data sheet
Quantity
RFQ
In stock: 402
Smallest : 450
Multiple : 1
Quantity
Unit price
Price
1
$14.3600
$14.3600
10
$12.6500
$126.5000
450
$9.9100
$4,459.5000
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Purchase and inquiry
Specification
Transport
Data sheet
ABLIC U.S.A. Inc. S-1132B33-I6T2U has similar specifications, properties, parameters and parts as ABLIC U.S.A. Inc. S-1132B33-I6T2U.
TYPEDESCRIPTION
MfrTransphorm
SeriesSuperGaN®
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs60mOhm @ 22A, 10V
Power Dissipation (Max)132W (Tc)
Vgs(th) (Max) @ Id4.8V @ 700µA
Supplier Device PackageTO-247-4L
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 400 V

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Mailing method


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Delivery time


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FedEx International, 5-7 business days.

The following are logistics times for some common countries.

transport

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